P-diamond Plasmonic TeraFET Detector
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2020-11-08 |
| Authors | Yuhui Zhang, M. S. Shur |
| Institutions | Rensselaer Polytechnic Institute |
| Citations | 5 |
Abstract
Section titled āAbstractāHydrodynamic modeling of p-diamond, Si, InGaAs/GaAs, and AlGaN/GaN TeraFETs reveal the potential and advantages of p-diamond TeraFETs for applications in the 240 to 340 GHz band and, therefore, for potentially beyond 5G and IoT applications. Our numerical results show that the p-diamond TeraFET could enable resonant detection in this band in contrast to other material systems. The p-diamond TeraFET have a high detection sensitivity in a large dynamic range. The diamond response characteristics can be adjusted by changing the gate length L and tuning the gate bias.