Readout and control of an endofullerene electronic spin
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2020-12-17 |
| Journal | Nature Communications |
| Authors | Dinesh Pinto, Domenico Paone, Bastian Kern, Tim Dierker, René Wieczorek |
| Institutions | University of Stuttgart, OsnabrĂŒck University |
| Citations | 32 |
| Analysis | Full AI Review Included |
Executive Summary
Section titled âExecutive SummaryâThis research demonstrates a critical step toward scalable molecular quantum technologies by achieving single-spin readout and control of an endofullerene molecule (14N@C60).
- Core Achievement: Successful single-spin Electron Paramagnetic Resonance (EPR) readout and control of the electronic spin of 14N@C60 (Nitrogen encapsulated in a C60 cage).
- Sensing Platform: A single, near-surface Nitrogen Vacancy (NV) center in diamond (3-8 nm deep) is used as a noninvasive local magnetic field sensor at 4.7 K.
- Interaction Mechanism: The NV center couples to the endofullerene spin via strong magnetic dipolar interaction, measured at a separation of approximately 5.6 nm, corresponding to a coupling strength of 20.29 MHz.
- Spin Control Demonstrated: Radio-frequency (RF) pulse sequences successfully drove Rabi oscillations on the endofullerene spin, achieving spin-state switching rates up to 12.47 MHz.
- Coherence Measurement: Spin-echo measurements established a lower limit for the endofullerene phase coherence time (T2) of 1 ”s.
- Material Effects: Surface adsorption of the 14N@C60 molecule onto the diamond surface enhanced the isotropic hyperfine constant (A=19 MHz) and induced an axial zero-field splitting (D=1.52 MHz).
- Future Scalability: These results enable the integration of robust, individually addressable molecular spins into large-scale quantum architectures using standard positioning or self-assembly methods.
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context |
|---|---|---|---|
| Operating Temperature | 4.7 | K | Cryogenic measurement environment. |
| Static Magnetic Field (B0) | 9.697 | mT | Field used for single-spin EPR spectroscopy. |
| NV Center Depth | 3-8 | nm | Near-surface NV centers used as local sensors. |
| NV-Endofullerene Separation (r) | 5.6(1) | nm | Extracted from initial linear dephasing rate. |
| Dipole-Dipole Coupling Strength (J) | 20.29(2) | MHz | NV-14N@C60 interaction strength. |
| Maximum Rabi Frequency (VRabi) | 12.47(1) | MHz | Tunable spin-state switching rate via RF control. |
| Endofullerene Coherence Time (T2) | ℠1 | ”s | Lower limit measured via spin-echo sequence. |
| NV Spin-Echo Coherence Time (TNV) | â 2.5 | ”s | Coherence time of the NV sensor itself. |
| 14N@C60 Hyperfine Constant (A) | 19 | MHz | Enhanced value due to surface adsorption (vs. 15.85 MHz bulk). |
| Axial Zero-Field Splitting (D) | 1.52 | MHz | Induced by surface adsorption effects. |
| 14N@C60 Solution Concentration | 0.1 | ”LL-1 | Concentration used for drop-casting. |
| Probability of Single-Spin Coupling | â 4.5 | % | Calculated probability within the NV sensing radius (~10 nm). |
| RF Pulse Duration (Minimum) | 1/(Ï * 12.47) â 25.5 | ns | Minimum pulse duration for Ï-pulse at maximum Rabi frequency. |
Key Methodologies
Section titled âKey MethodologiesâThe experiment utilized a home-built low-temperature (4.7 K) and ultrahigh vacuum (10-10 mbar) setup capable of confocal microscopy and pulsed MW/RF control.
- Diamond Substrate Preparation: Used a 30 ”m thick electronic grade [100] diamond.
- NV Center Creation: Implanted with 15N at 5 keV energy, followed by annealing at 975 °C for 2 hours.
- Optical Enhancement: Tapered nanopillar waveguides (700 nm base, 400 nm tip, 1 ”m height) were etched into the diamond to increase optical collection efficiency.
- Surface Cleaning and Termination: The diamond surface was cleaned and oxygen-terminated by boiling in a tri-acid mixture (1:1:1 HNO3:H2SO4:HClO4) at 200 °C for 5 hours.
- Endofullerene Deposition: Powder 14N@C60 (filling factor 10-4) was dissolved in toluene to a concentration of 0.1 ”LL-1. A 1 ”L aliquot was drop-coated onto the cleaned diamond surface under ambient conditions.
- NV Initialization and Readout: NV spins were initialized and read out using a 515 nm laser focused via a low-temperature objective (NA = 0.82). Red fluorescence (filtered at 650 nm) was monitored using Hanbury Brown-Twiss (HBT) configuration.
- Spin Control: MW and RF pulses were delivered via a 20 ”m thick gold wire fabricated across the diamond surface.
- Measurement Technique: Pulsed Electron-Electron Double Resonance (PELDOR or DEER) spectroscopy was performed using a double-quantum (DQ) pulse scheme to synchronize the central spin-flip of the NV center with the RF spin-flip pulse on the external 14N@C60 spin.
Commercial Applications
Section titled âCommercial ApplicationsâThe ability to individually address and control robust atomic spins packaged within molecular cages (endofullerenes) is crucial for several emerging high-tech sectors.
- Quantum Computing and Information Processing (QIP): Endofullerenes act as robust, pre-packaged qubits (electron spin S=3/2, nuclear spin I=1) that can be precisely positioned and integrated into solid-state architectures (like diamond NV centers) for scalable quantum registers.
- Solid-State Quantum Memories: The nuclear spin of the encapsulated atom (e.g., 14N or 31P) offers long coherence times, making endofullerenes excellent candidates for quantum memory storage interfaced via the electronic spin âbus.â
- Nanoscale Magnetic Sensing and Metrology: The NV center/endofullerene system provides a platform for ultra-sensitive, noninvasive local magnetic field sensing, potentially applicable in materials science or biological imaging.
- Molecular Spintronics: Utilizing the intrinsic spin properties of molecular systems for data storage and processing, leveraging the chemical tunability and robust nature of the fullerene cage.
- Scalable Quantum Architectures: The demonstrated compatibility with C60 self-assembly techniques and standard positioning methods (STM dragging, CNT packing) provides a pathway for manufacturing large-scale, ordered quantum device arrays.