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Controlling thermoelectric transport via native defects in the diamond-like semiconductors Cu2HgGeTe4 and Hg2GeTe4

MetadataDetails
Publication Date2021-01-01
JournalJournal of Materials Chemistry A
AuthorsJiaxing Qu, Claire E. Porter, Lídia C. Gomes, Jesse Adamczyk, Michael Y. Toriyama
InstitutionsUniversity of California, Santa Barbara, Colorado School of Mines
Citations9

Defect analysis and phase boundary mapping of Cu 2 HgGeTe 4 and Hg 2 GeTe 4 reveal reciprocal doping potential despite their similar crystal structures. Measurements validate predictions of Cu 2 HgGeTe 4 as highly degenerate and Hg 2 GeTe 4 as an intrinsic semiconductor.