Synthesis and Characterization of a Trigonal Layered Compound AgInS2
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-03-16 |
| Journal | ACS Omega |
| Authors | Takahiro Sawahara, Ryo Matsumoto, Yuki Nakahira, Hidetomo Usui, Noriyuki Kataoka |
| Institutions | National Institute of Advanced Industrial Science and Technology, Hokkaido University |
| Citations | 1 |
Abstract
Section titled āAbstractāDepending on thermal and pressure conditions, AgInS<sub>2</sub> exhibits various crystal structures. In this study, we synthesized a high-purity polycrystalline sample of trigonal AgInS<sub>2</sub>, which is a layered compound, using a high-pressure synthesis technique. The crystal structure was investigated by synchrotron powder X-ray diffraction and the Rietveld refinement. On the basis of band calculation, X-ray photoelectron spectroscopy, and electrical resistance measurements, we found that the obtained trigonal AgInS<sub>2</sub> is a semiconductor. Temperature dependencies of electrical resistance of AgInS<sub>2</sub> were measured by a diamond anvil cell up to 31.2 GPa. Although semiconducting behavior was suppressed with pressure, metallic behavior was not observed within the pressure range investigated in this study.