Radiation and Emission in Materials - Similarity of Principles and Multi‐Functional Applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-01-01 |
| Journal | physica status solidi (a) |
| Authors | Andrej Kuznetsov, S. Dangtip, S. Intarasiri |
| Institutions | Chiang Mai University, University of Oslo |
Abstract
Section titled “Abstract”Energetic particle beams are of paramount importance in nature, as well as in modern day science and industry. For example, while studying material properties, one directs an appropriate beam of particles into a material and collects the interaction data. Moreover, modifications of materials with particles beams—also known in literature as radiation effects—are extremely many fold, both natural and manmade. Thus, it may be very interesting to look at the radiation and emission phenomena in its natural combination, in the range from accelerated ionizing particles to electromagnetic radiation, building on the similarity of the basic principles and multi-functional applications. Meanwhile, organizing a conference having a broad scope is challenging; indeed, on the one hand the cross-disciplinarily creates a massive potential for synergy effects; however, on the other hand there is a risk of defocusing and losing the grounds of the professional discussions. Indeed, even though there are many examples of new international conferences emerging around the globe and trying to capitalize on the generic approaches, the success stories are rare. However, the strength of International Conference on Radiation and Emission in Materials (ICREM) is in interconnecting specific sub-fields of the radiation and emission, as such appearing paradoxically focused and generic at the same time. The ICREM has shown its initial success; indeed, started in 2018 as an annual event, already its 2nd edition in 2019 (http://icrem2019.science.cmu.ac.th/) resulted in a strong collection of papers comprising the present pss(a) Special Issue. Fronted by the International Advisory Board, the ICREM attracts attendees from all around the world. For instance, the ICREM2019 attracted >150 participants. One of the ICREM assets is its creative atmosphere reached by mixing reputable experts with enthusiastic younger generation researchers and students, gaining inspirations for long-term developments. The practicalities with the ICREM organization are transparent and attractive. Indeed, the ICREM teams with the world-renowned Thai hospitality and climate; there is a dedicated crew providing excellent local organization for the ICREM, in particular featured by low fees; the ICREM is predictable by keeping its regular base in Thailand, also benefiting from a variety of accessible university locations at different parts of Thailand. At this end, the driving force behind the ICREM is to enhance the professional development in the field of the radiation and emission in materials. The ICREM2019 featured a broad scientific scope, in particular covering fundamentals of light-matter interaction, solar cells, light emitting devices, detectors for different radiation ranges, accelerated particle beams, and plasma technology. Figure 1 shows the ICREM2019 logo, i.e. a schematic of the traditional Thai house together with a symbolic emission process as a result of the inter-level/shell transitions. This logo makes a graphical interpretation of our intention to interconnect various types of radiation and emission phenomena. To be specific, we categorize the conference highlights in three divisions: accelerated particle beams, advanced optical materials, and devices. The data related to electron, positron, proton and heavy ion beams were discussed at the conference. In particular, Xiao et al (pssa.202000371) have reported on the recent progress in the Wakefield accelerators development, providing excellent example on the interconnection between different types of the radiation phenomena—in this case ultrafast electron bunches from the 100-TW level laser systems. Hama and Miura (pssa.202000294) have presented the concept of the electron accelerator system employing superconducting radiofrequency cavities, potentially enabling significantly lower-cost next generation electron accelerators. Slotte et al. (pssa.202000232) have emphasized the use of positrons for defect identification in semiconductors as a unique method to study vacancy type defects and their complexes. Gong et al. (pssa.202000102) have illustrated the use of high-energy proton irradiation to engineer single crystalline diamond for sensing applications, extending the capabilities of the “proton writing”. Dauletbekova et al (pssa.202000231) have used ion-tracks in a silicon-based template for controlable localizations/synthesis of the CdTe nanocrystals. Webb et al. (pssa.202000237) have reported on the unprecedented capabilities of newly designed focused ion beam instrument for deterministic ion implants, potentially applicable for fabrication of qubits in quantum technologies. The predominant part of optical materials considered at the conference were semiconductors. Reshchikov (pssa.202000101) has reviewed important aspects related to the photoluminescence quenching and sort out the mechanisms responsible for this effect in semiconductors, specifically providing a number of instructive examples on GaN. Liu et al (pssa.202000150) have investigated the surface plasmon resonance in the grating structures of highly Ga-doped ZnO, demonstrating interesting control by the refractive index of the substrate. Pecharapa et al. (pssa.202000233) have investigated the role of the Sb doping on the optoelectronic properties of ZnO, in particular using x-ray photoelectron and photoluminescence spectroscopies. Boonyawan et al. (pssa.202000239) have fabricated TiO2 quantum dots of 4.5 nm in average size and considered these architectures for further explorations in electron transporting layers for perovskite solar cells. Guziewicz et al. (pssa.202000318) have investigated the role of hydrogen on optoelectronic properties of ZnO. Teisseyre et al (pssa.202000344) have reported the optically induced operation of ZnO/ZnMgO quantum well laser diodes and introduced plasmonic corrections to the waveguide refractive index. Oda and Hori (pssa.202000462) provided an excellent example of the interconnection between different topics of the conference by reviewing the use of plasma technology for the nitrides semiconductor epitaxy. There are endless combinations of devices demonstrating multi-functional applications in the field of the radiation and emission in materials. At the ICREM2019 the interest was attracted to the solar cells, varieties of radiation detectors, and bio-applications. In particular, Li et al. (pssa.202000258) have reported how the better understanding of defects, such as stacking faults, dislocations and cracks, helps controlling or even eliminating such defects and consequently improving the solar cell efficiency. Bhoomanee et al. (pssa.202000238) have demonstrated an innovative fabrication approach in perovskite solar cell using TiO2 nanorods in the electron transport layer, also leading to the higher efficiency. Wang and Berencén (pssa.202000260) have used ion implantation with subsequent pulsed laser annealing to push the impurity incorporation to the “hyper-level”, enabling broadband infrared silicon-based photodetectors for room-temperature response. Liang et al. (pssa.202000339) have reported the deep ultraviolet photodiode using amorphous gallium oxide and provided comprehensive data on the trade-offs resolved in the fabrication process. Nikiforov et al. (pssa.202000341) have studied thermo-luminescence response of the Al2O3-BeO ceramic and its potential use in dosimetry, in particular connecting the oxygen vacancies and their aggregates with the luminescence. Very importantly, the radiation phenomena in biological samples attracted the interest too. In particular, Whitlow et al (pssa.202000107) have used the ion beam microscopy to study samples of rhesus macaques, monitoring Ti, Mn, Fe, and Pb redistributions in cells as a function of the simian immunodeficiency virus infection, also speculating on its promises for the human immunodeficiency virus diagnostics. Tanakaran and Matra (pssa.202000240) have correlated the electric field distribution in the air plasma with the germination and growth rate of the microgreen seeds. In our opinion, the ICREM organization is a well-motivated addition to the forums already available in the field of the radiation and emission in materials. We trust this pss(a) Special Issue comprising the highlights of the ICREM2019 can be of use for a wide and cross-disciplinary research community dealing with radiation effects, as well as for the students in the field to use the papers collected herein for studies, referencing, and inspirations. We thank all the authors and co-authors of the papers submitted to this Special Issue, as well as all participants of the ICREM2019 for attending the conference. Finally, we invite to participate in the future ICREM events regularly scheduled for mid-December in Thailand. In particular, the 4th edition of the conference is scheduled for the 14-17th December 2021 to take place in Bangkok (http://icrem2021.science.cmu.ac.th/). We are happy to acknowledge the support provided to the ICREM by the Thailand Institute of Nuclear Technology via grant TINT-561011-2562, by the Thailand Center of Excellence in Physics, and by the Chiang Mai University. We also appreciate the networking opportunities enabled by the INTPART grant nr 261574 from the Research Council of Norway. Andrej Kuznetsov was awarded with his Ph.D. degree in physics from the Russian Academy of Sciences in 1992 and accomplished his habilitation in solid state electronics in 2000 at the Royal Institute of Technology in Sweden. In 2001 he joined the Department of Physics at the University of Oslo (UiO) in Norway as the associate professor, where he was subsequently promoted to the full professor rank in 2003. From 2018 he acts as the Chair of the UiO Centre of Excellence: Light and Electricity from Novel Semiconductors (LENS)—as a part of the Centre for Materials Science and Nanotechnology at UiO. He is an expert in the field of modern semiconductors in particular focusing on the physic of diffusion, defects and radiation effects. Somsak Dangtip has completed his Ph.D. in Applied Neutron Physics from Department of Neutron Research, Uppsala University, Sweden in 2000. Later that year, he started working at the Chiang Mai University in Thailand. In 2003 he has moved to work at the Mahidol University. In 2019 he joined the Thailand Institute of Nuclear Technology as a director of the Center of Excellence for Advanced Nuclear Technology. Early in his career, he has worked on converting an accelerator for deuterium-tritium fusion study to low energy deuterium beam for Rutherford backscattering. Along this path, he gradually progressed to involve the plasma technology in the ion source design and other applications. At present, he is working on setting up the first tokamak facility in Thailand. Saweat Intarasiri accomplished his M.Sc. degree in 1993 and immediately started his career as a physicist, by joining the team responsible for the first Thailand ion implanter installation at the Chiang Mai University (CMU). In 2007 he received his Ph.D. degree from CMU, also as a joint degree with the Uppsala University in Sweden; the Ph.D. work was devoted to the investigations of silicon carbide ion beam synthesis by carbon implants into silicon. At present, he is developing ion beam tools and analytical instruments for analysis and improvements of gemstones.