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Probing thermal conductivity of subsurface, amorphous layers in irradiated diamond

MetadataDetails
Publication Date2021-02-02
JournalJournal of Applied Physics
AuthorsEthan A. Scott, Jeffrey L. Braun, Khalid Hattar, Joshua D. Sugar, John T. Gaskins
InstitutionsUniversity of California, Los Angeles, University of Virginia
Citations15

In this study, we report on the thermal conductivity of amorphous carbon generated in diamond via nitrogen ion implantation (N3+ at 16.5 MeV). Transmission electron microscopy techniques demonstrate amorphous band formation about the longitudinal projected range, localized approximately 7 μm beneath the sample surface. While high-frequency time-domain thermoreflectance measurements provide insight into the thermal properties of the near-surface preceding the longitudinal projected range depth, a complimentary technique, steady-state thermoreflectance, is used to probe the thermal conductivity at depths which could not otherwise be resolved. Through measurements with a series of focusing objective lenses for the laser spot size, we find the thermal conductivity of the amorphous region to be approximately 1.4 W māˆ’1 Kāˆ’1, which is comparable to that measured for amorphous carbon films fabricated through other techniques.

  1. 2018 - Tutorial: Time-domain thermoreflectance (TDTR) for thermal property characterization of bulk and thin film materials [Crossref]
  2. 2019 - Spatially resolved thermoreflectance techniques for thermal conductivity measurements from the nanoscale to the mesoscale [Crossref]
  3. 2004 - Analysis of heat flow in layered structures for time-domain thermoreflectance [Crossref]
  4. 2020 - A review of experimental and computational advances in thermal boundary conductance and nanoscale thermal transport across solid interfaces [Crossref]
  5. 2018 - Thermal boundary conductance across heteroepitaxial ZnO/GaN interfaces: Assessment of the phonon gas model [Crossref]
  6. 2018 - Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon [Crossref]
  7. 2018 - Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1-xZrxO2) dielectrics and ferroelectric thin films [Crossref]
  8. 2007 - Frequency dependence of the thermal conductivity of semiconductor alloys [Crossref]
  9. 2017 - Upper limit to the thermal penetration depth during modulated heating of multilayer thin films with pulsed and continuous wave lasers: A numerical study [Crossref]
  10. 2018 - On the steady-state temperature rise during laser heating of multilayer thin films in optical pump-probe techniques [Crossref]