H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-03-01 |
| Journal | AIP Advances |
| Authors | Zeyang Ren, Yufei Xing, Dandan Lv, Jiamin Xu, Jinfeng Zhang |
| Institutions | Wuhu Institute of Technology, Xidian University |
| Citations | 6 |
Abstract
Section titled āAbstractāThe performance of hydrogen-terminated diamond MOSFETs with a large gate-drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 Ā°C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and device passivation layer. The HfO2/H-diamond interfacial valence band offset of 1.98 eV was determined by x-ray photoelectron spectroscopy, indicating that the high temperature grown HfO2 dielectric has great potential for accommodating a high density of holes on the H-diamond surface, and the high dielectric constant of HfO2 is also useful for improving the control capability of the gate on the device channel. A breakdown voltage of 657 V was achieved on the device. Baligaās figure of merit of the device was calculated to be ā¼2.0 MW/cm2, which is comparable to that of the H-diamond FETs with Al2O3 dielectrics that are more than 200 nm thick. The HfO2 dielectric shows great potential for use in H-diamond power devices.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2002 - High carrier mobility in single-crystal plasma-deposited diamond [Crossref]
- 2007 - Review article: High quality MPACVD diamond single crystal growth: High microwave power density regime [Crossref]
- 1991 - Large-area mosaic diamond films approaching single-crystal quality [Crossref]
- 2017 - Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications [Crossref]
- 2013 - Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges [Crossref]
- 2012 - Maskless selective growth method for p-n junction applications on (001)-oriented diamond [Crossref]
- 2012 - Hydrogen-terminated diamond field-effect transistors with cutoff frequency of 53 GHz [Crossref]
- 2005 - 2 W/mm output power density at 1Ā GHz for diamond FETs [Crossref]
- 2012 - Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer [Crossref]
- 2018 - A high frequency hydrogen-terminated diamond MISFET with fT/fmax of 70/80 GHz [Crossref]