Skip to content

Determining the position of a single spin relative to a metallic nanowire

MetadataDetails
Publication Date2021-04-08
JournalJournal of Applied Physics
AuthorsJ. F. Da Silva Barbosa, M. Lee, P. Campagne-Ibarcq, P. Jamonneau, Y. Kubo
InstitutionsCentre National de la Recherche Scientifique, Okinawa Institute of Science and Technology Graduate University
Citations3
AnalysisFull AI Review Included

This research demonstrates a critical step toward hybrid quantum devices by precisely localizing individual Nitrogen-Vacancy (NV) centers relative to a metallic nanowire using vector magnetometry.

  • Core Achievement: Determining the relative position of individual NV centers in diamond with respect to an overlying metallic nanowire with an accuracy of approximately 10 nm.
  • Methodology: Single-NV vector magnetometry was employed, measuring the vector magnetic field components (Bz and B⊄) generated by a DC current passing through the nanowire.
  • Material System: 15N NV centers implanted into electronic-grade CVD diamond, coupled to a 20 nm thick Aluminum/Titanium nanowire.
  • Key Finding: The measured NV positions showed a systematic lateral shift of ~120 nm, attributed to misalignment during the electron-beam lithography steps.
  • Quantum Application: The positional data allows for a direct, room-temperature estimation of the spin-microwave coupling constant ($g/2\pi$), yielding values between 0.6 and 1 kHz for a proposed superconducting resonator design.
  • Detection Time Estimate: The estimated single-spin detection time for unit signal-to-noise ratio in a resonator setup is predicted to be between 0.6 and 5 seconds.
ParameterValueUnitContext
Positional Accuracy~10nmRelative NV position determination.
Electron Spin Zero-Field Splitting (D/2π)2.87GHzNV ground state triplet (S=1).
Electron Spin Gyromagnetic Ratio (Îłe/2π)28GHz/TStandard NV property.
15N Nuclear Gyromagnetic Ratio (ÎłI/2π)-4.3MHz/TStandard 15N property.
Implantation Ion15N2+ionsUsed for creating NV centers.
Implantation Energy7.5keVDetermines implantation depth.
Implantation Flux~2500N/”m2Nitrogen dose density.
SRIM Estimated Depth11 ± 5nmExpected depth of NV centers.
N to NV Conversion Yield~3%Efficiency of defect creation.
Nanowire Thickness (Total)20nm5 nm Ti / 15 nm Al layers.
Nanowire Width (Typical)40nmFabricated dimension.
Nanowire Length500nmFabricated dimension.
Nanowire Direction[110]Crystalline axisDirection of current flow.
Measured Bz Derivative (az)1.4 ± 0.1T/AField component parallel to NV axis.
Measured B⊄ Derivative (a⊄)1.9 ± 0.3T/AField component perpendicular to NV axis.
Nanowire Width Uncertainty (w)36 ± 5nmUsed in position fitting model.
Nanowire Thickness Uncertainty (t)20 ± 2nmUsed in position fitting model.
Estimated Coupling Constant (g/2π)0.6 to 1kHzCalculated for a superconducting resonator (assuming ÎŽi = 35 nA).
Estimated Detection Time (Tdet)0.6 to 5sFor unit signal-to-noise ratio (assuming Îș=105 s-1, Îł2=105 s-1).

The experiment involved precise diamond preparation, targeted ion implantation, and nanoscale metallization, followed by advanced quantum sensing measurements.

  1. Diamond Preparation:

    • Substrate: Commercial electronic-grade CVD diamond (Element 6).
    • Alignment Marks: Patterned via electron-beam lithography (EBL) and etched into the diamond surface.
  2. Implantation Mask Fabrication:

    • Resist: 120 nm thick PMMA layer applied.
    • Patterning: EBL used to create an array of holes (~20 nm diameter) aligned precisely to the etched marks.
  3. Ion Implantation:

    • Ions: 15N2+ ions used (resulting in 15N NV centers, which have a nuclear spin I = 1/2).
    • Parameters: 7.5 keV energy, flux of ~2500 N/”m2.
  4. NV Center Creation and Cleaning:

    • Annealing: 900 °C for 1 hour in vacuum to mobilize vacancies and form NV centers.
    • Acid Cleaning (Multi-step):
      • Boiling HNO3:H2SO4:HClO4 (3:4:1) for 6 hours.
      • H2SO4:H2O2 (3:1) at 120 °C for 2 hours (Piranha clean).
      • Final oxygen plasma clean.
  5. Nanowire Fabrication (EBL and Evaporation):

    • Alignment: EBL used again, aligned to the etched marks, to position nanowires over the implanted NV locations.
    • Deposition: Three-angle evaporation through a suspended germanium mask (liftoff technique).
    • Layers: 5 nm Titanium adhesion layer, followed by 15 nm Aluminum (total 20 nm thickness).
  6. Vector Magnetometry Measurement:

    • Readout: Optically-Detected Magnetic Resonance (ODMR) using a 532 nm green laser and 637 nm red photoluminescence detection.
    • Bz Measurement: Standard ODMR measurement of the Zeeman shift of the electron spin transitions (W±,mI) as a function of DC current (io).
    • B⊄ Measurement: Nuclear spin selective pulse sequence used to measure the nuclear spin oscillation frequency (WNO), which is sensitive to the transverse field B⊄.
  7. Position Determination:

    • Modeling: The measured magnetic field derivatives (az and a⊄) were fitted to a model of the field generated by an ideal infinite wire.
    • Refinement: Finite element method simulations were used to correct for the finite length of the nanowire and account for uncertainties in wire geometry (width 36 ± 5 nm, thickness 20 ± 2 nm).

The technology developed here—high-precision, nanoscale positioning of quantum defects relative to metallic circuitry—is foundational for several advanced quantum and sensing applications.

  • Quantum Computing and Networks:

    • Hybrid Qubit Systems: Essential for maximizing the coupling strength ($g$) between solid-state spins (NV centers) and superconducting microwave resonators (Circuit QED architecture).
    • Fast Spin Detection: Enables the development of fast, high-fidelity spin detection and entanglement generation necessary for quantum processors and quantum networks.
  • Nanoscale Sensing and Metrology:

    • Vector Magnetometry: NV centers serve as highly sensitive vector magnetometers, capable of mapping magnetic fields generated by complex nanoscale structures (e.g., magnetic domains, current flow in integrated circuits).
    • Probing Magnetic Structures: Used for high-resolution imaging and characterization of magnetic materials and devices at the nanoscale, potentially replacing or complementing techniques like STED/STORM in environments where optical methods fail (e.g., near metallic structures).
  • Advanced Materials Engineering (Diamond):

    • Controlled Defect Engineering: The precise implantation and localization techniques (using EBL masks and 15N ions) are critical for manufacturing diamond substrates with deterministic placement of quantum defects.
    • CVD Diamond Substrates: The use of electronic-grade CVD diamond (like those supplied by Element 6) confirms the material platform necessary for high-coherence quantum devices.
View Original Abstract

The nanoscale localization of individual paramagnetic defects near an electrical circuit is an important step for realizing hybrid quantum devices with strong spin-microwave photon coupling. Here, we fabricate an array of individual nitrogen vacancy (NV) centers in diamond near a metallic nanowire deposited on top of the substrate. We determine the relative position of each NV center with ∌10 nm accuracy, using it as a vector magnetometer to measure the field generated by passing a DC through the wire.