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6CCVD Research

Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2021-04-08
AuthorsJames Weil, Pankaj B. Shah, Dmitry Ruzmetov, Mahesh R. Neupane, Leonard M. De La Cruz
InstitutionsK Lab (United States)

Abstract

Section titled ā€œAbstractā€

Army Research Laboratory (ARL) is developing radio frequency (RF) field-effect-transistors (FETs) on hydrogen-terminated, single-crystal diamond surfaces. By employing advanced fabrication methods, we achieve state-of-the-art device performance with gate lengths below 100 nm. We are exploring methods to improve the stability of fabricated FETs, which is critical for maturation of the technology and its commercial acceptance. DC and RF measurement data will be reviewed and discussed within the framework of improving device yield and reliability.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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