Highly efficient charging and discharging of three-level quantum batteries through shortcuts to adiabaticity

At a Glance

Metadata	Details
Publication Date	2021-04-28
Journal	arXiv (Cornell University)
Authors	Fu-Quan Dou, Yuan‐Jin Wang, Jianan Sun
Institutions	Northwest Normal University
Citations	44
Analysis	Full AI Review Included

Executive Summary

This research investigates the use of Shortcuts to Adiabaticity (STA) via Counterdiabatic STIRAP (cdSTIRAP) to drastically enhance the performance of three-level quantum batteries.

Core Achievement: Developed a cdSTIRAP protocol that significantly accelerates both the charging and discharging cycles of a three-level quantum battery system.
Methodology: An auxiliary control field (Counterdiabatic, CD) is applied to the standard Stimulated Raman Adiabatic Passage (STIRAP) Hamiltonian. This field suppresses nonadiabatic excitations, ensuring the system remains locked in the energy-transferring “dark state” during rapid evolution.
Performance Gain (Power): The maximum charging power (P_max) was increased by approximately 4 to 5 times compared to the original STIRAP protocol.
Performance Gain (Energy): The maximum stored energy (ergotropy, C_max) was increased by 3 to 4 times, achieving complete and stable charging in a very short time.
Robustness: The cdSTIRAP protocol maintains full charging capacity across a wide range of driving field peak amplitudes (Ω₀), demonstrating high stability.
Implementation Platforms: The protocol is proposed for experimental realization using superconducting transmon circuits (driven by microwave pulses) or negatively charged Nitrogen-Vacancy (N-V) centers in diamond (driven by microwave and strain fields).

Technical Specifications

The following data points are derived from the numerical simulations and proposed system parameters:

Parameter	Value	Unit	Context
Max Charging Power Increase	4 to 5	Times	cdSTIRAP vs. standard STIRAP
Max Stored Energy Increase	3 to 4	Times	cdSTIRAP vs. standard STIRAP
Charging Time Reduction	Significant	N/A	Enables complete charge in “very short time”
Energy Level Spectrum (ε₁)	0	Arbitrary	Ground state (discharged battery)
Energy Level Spectrum (ε₂)	1	Arbitrary	First excited state (partially charged)
Energy Level Spectrum (ε₃)	1.95	Arbitrary	Second excited state (fully charged)
Pulse Shape (P and S fields)	Gaussian	N/A	Used for simulation (Ω(t) = Ω₀e^-(t/T)²)
CD Field Shape (Ω_cd)	Hyperbolic Secant	N/A	Modulated to ensure adiabaticity
Pulse Width (T)	1	Arbitrary	Standardized simulation unit
Delay Time (τ)	0.7T	Arbitrary	Optimized delay for high performance
Required Adiabaticity Time (STIRAP)	> 100T	N/A	Required for standard STIRAP full charge (Inset, Fig. 2)

Key Methodologies

The core methodology involves implementing the cdSTIRAP protocol by introducing a calculated auxiliary field to the three-level system Hamiltonian:

System Definition: A three-level quantum system (|1>, |2>, |3>) is defined, representing the discharged, partially charged, and fully charged states, respectively.
STIRAP Baseline: The system is initially driven by two external fields (P and S pulses) in a counterintuitive sequence (P before S) to achieve energy transfer from |1> to |3> via the dark state |0>.
Counterdiabatic Field Calculation: The Hamiltonian (H₂) is constructed by adding the Counterdiabatic (CD) term (H_cd) to the standard STIRAP Hamiltonian (H₁).
Adiabaticity Condition: The amplitude of the CD field (Ω_cd) is precisely calculated to cancel the off-diagonal elements in the transformed Hamiltonian, thereby ensuring the system remains locked in the instantaneous dark state during rapid evolution.
Pulse Modulation:
- The P and S fields are modeled as Gaussian pulses (Ω_P, Ω_S) with peak amplitude Ω₀ and width T, separated by a delay τ.
- The CD field (Ω_cd) is modulated using a hyperbolic secant function (sech) proportional to 4τ/T², ensuring it compensates for nonadiabatic effects precisely when needed.
Charging Protocol: The system starts in |1> and is driven by the cdSTIRAP sequence to rapidly reach the fully charged state |3>.
Discharging Protocol: The pulse sequence is reversed, and a corresponding CD pulse is applied (Ω_cd proportional to -sech) to rapidly extract energy, transitioning the system from |3> back to |1>.

Commercial Applications

The development of high-power, fast-cycling quantum batteries has direct implications for several advanced technological sectors:

Quantum Computing Infrastructure: Provides stable, high-speed energy storage necessary for operating quantum processors (qubits), particularly in superconducting circuit architectures where fast control pulses are critical.
High-Speed Quantum Sensing: Applicable to N-V center-based quantum sensors in diamond, enabling rapid cycling and resetting of the sensor state, which is crucial for high-frequency magnetic or electric field measurements.
Miniaturized Quantum Devices: The concept supports the development of ultra-compact, high-density energy sources required for future portable quantum technologies and highly integrated electronic systems.
High-Power Energy Release: The demonstrated 4-5x increase in discharge power makes this technology suitable for specialized quantum appliances requiring rapid, high-intensity energy bursts.
Advanced Material Engineering (CVD Diamond): The N-V center implementation relies on high-quality, isotopically pure diamond substrates, linking the technology directly to advanced Chemical Vapor Deposition (CVD) manufacturing processes for quantum-grade materials.

View Original Abstract

Quantum batteries are energy storage devices that satisfy quantum mechanical principles. How to improve the battery’s performance such as stored energy and power is a crucial element in the quantum battery. Here, we investigate the charging and discharging dynamics of a three-level counterdiabatic stimulated Raman adiabatic passage quantum battery via shortcuts to adiabaticity, which can compensate for undesired transitions to realize a fast adiabatic evolution through the application of an additional control field to an initial Hamiltonian. The scheme can significantly speed up the charging and discharging processes of a three-level quantum battery and obtain more stored energy and higher power compared with the original stimulated Raman adiabatic passage. We explore the effect of both the amplitude and the delay time of driving fields on the performances of the quantum battery. Possible experimental implementation in superconducting circuit and nitrogen-vacancy center is also discussed.

Tech Support

Original Source

DOI: https://doi.org/10.1007/s11467-021-1130-5

References

2018 - Thermodynamics in the Quantum Regime: Fundamental Aspects and New Directions [Crossref]