Preparation of boron-doped diamond attenuator for W-band folded waveguide traveling wave tube
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-04-27 |
| Journal | 2021 22nd International Vacuum Electronics Conference (IVEC) |
| Authors | Chenyi Hua, Lili Li, Pan Pan, Jun Cai, Jinjun Feng |
| Citations | 1 |
Abstract
Section titled āAbstractāAttenuators with high thermal conductivity and high fracture strength were required in vacuum electronic devices. In this work, boron-doped diamond film which was used as microwave attenuation material was prepared by DC arc jet chemical vapor deposition (CVD) and the boron-doped diamond attenuator for W-band fold waveguide traveling wave tube (TWT) was fabricated based on simulation results. The results showed that the dielectric constant of boron-doped diamond film was between 7.49 and 8.43, and the loss tangent was around 0.32 in W-band. Meanwhile, the fracture strength of boron doped diamond was 428Ā±22 MPa in average. In addition, the voltage standing wave ration (VSWR) and S <inf xmlns:mml=āhttp://www.w3.org/1998/Math/MathMLā xmlns:xlink=āhttp://www.w3.org/1999/xlinkā>21</inf> of boron doped CVD diamond attenuator were less than 1.10 and below ā50 dB in the range of 85-110 GHz.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2006 - broadband microwave and W-band characterization of BeO-SiC and AlN-based lossy dielectric composites for vacuum electronics
- 2008 - attenuator for W-band folded waveguide TWT