Silicon carbide detectors for sub-GeV dark matter
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-04-06 |
| Journal | eScholarship (California Digital Library) |
| Authors | SinƩad M. Griffin, Yonit Hochberg, Katherine Inzani, Noah Kurinsky, Tongyan Lin |
| Institutions | Lawrence Berkeley National Laboratory, Fermi National Accelerator Laboratory |
| Citations | 80 |
Abstract
Section titled āAbstractāWe propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC has properties similar to both silicon and diamond but has two key advantages: (i) it is a polar semiconductor which allows sensitivity to a broader range of dark matter candidates; and (ii) it exists in many stable polymorphs with varying physical properties and hence has tunable sensitivity to various dark matter models. We show that SiC is an excellent target to search for electron, nuclear and phonon excitations from scattering of dark matter down to 10 keV in mass, as well as for absorption processes of dark matter down to 10 meV in mass. Combined with its widespread use as an alternative to silicon in other detector technologies and its availability compared to diamond, our results demonstrate that SiC holds much promise as a novel dark matter detector.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal Sourceā- DOI: None