Analysis method of diamond dislocation vectors using reflectance mode X-ray topography
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-06-24 |
| Journal | Diamond and Related Materials |
| Authors | Shinichi Shikata, Kensuke Miyajima, Naoya Akashi |
| Institutions | Kwansei Gakuin University |
| Citations | 13 |
Abstract
Section titled āAbstractāX-ray topography is an effective tool for investigating dislocations in semiconductor crystals. Owing to the low X-ray absorption coefficients of light element materials such as diamond, X-rays can penetrate deep into the crystal. Thus, deep three-dimensional dislocations are projected onto a two-dimensional film, which makes dislocation analysis particularly challenging. The dislocation vectors from the films obtained using a set of the same diffraction vectors were identified using topographical and geometrical analyses. The depth and position of the dislocations in a three-dimensional crystal that was projected onto a two-dimensional film were determined using geometrical relationships. The proposed analysis method was verified by analyzing many dislocations using four <404> diffraction films.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2018 - 3.3kV All-SiC module for electric distribution equipment
- 2010 - Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique
- 2016 - Analysis of dislocation structures in 4H-SiC by synchrotron X-ray topography
- 2009 - Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique
- 2012 - Relationship between threading dislocation and leakage current in 4H-SiC diodes [Crossref]
- 2015 - Material science and device physics in SiC technology for high voltage power devices [Crossref]
- 1982 - Semiconductors for high voltage, vertical channel field effect transistors [Crossref]