Effect of SiC formation temperature on improvement in thermal conductivity of electrodeposited SiC-coated diamond/Cu composite plating
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-06-09 |
| Journal | Composite Interfaces |
| Authors | Yuto Naruse, JaeāHyeok Park, Takeshi Hagio, Yuki Kamimoto, Takeshi Bessho |
| Institutions | Nagoya University, Toyota Motor Corporation (Japan) |
| Citations | 9 |
Abstract
Section titled āAbstractāDiamond/Cu composites are considered promising heat spreader materials; however, improving the interfacial adhesion between diamond and Cu is a challenge in manufacturing these composites. We focused on the surface modification of diamonds and previously reported that the formation of a SiC on the diamond surface effectively enhances the diamond/Cu interfacial adhesion, as well as thermal conductivity. In this study, the optimum treatment temperature to form SiC on diamond to apply to SiC-coated diamond/Cu composite platings for improving the interfacial adhesion and thermal conductivity is investigated. The formation of SiC on the diamond surface was greatly affected by the treatment temperature, and the coverage of the SiC coating on the diamonds increased with treatment temperature. The formation of a more uniform SiC coating contributed to improved interfacial adhesion between the diamond and electrodeposited Cu matrix. The thermal conductivity of the SiC-coated diamond/Cu composite plating generally increased with an increase in temperature; however, excessive heat treatment at 1450Ā°C decreased the thermal conductivity. The composite platings using SiC-coated diamond prepared at 1400Ā°C showed a maximum thermal conductivity of 454 Wmā1Kā1, which was higher than that of pure Cu platings (373 Wmā1Kā1) and pristine diamond/Cu composite platings (375 Wmā1Kā1).