Stable Field Electron Emission and Plasma Illumination from Boron and Nitrogen Co‐Doped Edge‐Rich Diamond‐Enhanced Carbon Nanowalls
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-09-16 |
| Journal | Advanced Materials Interfaces |
| Authors | Mateusz Ficek, Bartłomiej Dec, Kamatchi Jothiramalingam Sankaran, Krzysztof Gajewski, Piotr Tatarczak |
| Institutions | University of Warsaw, Hasselt University |
| Citations | 17 |
Abstract
Section titled “Abstract”Abstract Superior field electron emission (FEE) characteristics are achieved in edge‐rich diamond‐enhanced carbon nanowalls (D‐ECNWs) grown in a single‐step chemical vapor deposition process co‐doped with boron and nitrogen. The structure consists of sharp, highly conductive graphene edges supplied by a solid, diamond‐rich bottom. The Raman and transmission electron microscopy studies reveal a hybrid nature of sp 3 ‐diamond and sp 2 ‐graphene in these nanowalls. The ab‐initio calculations were carried out to support the experimental observations of diamond‐graphene hybrid structure. Finally, this hybrid D‐ECNWs is employed as a cathode in an FEE device resulting in a low turn‐on field of 3.1 V µ m −1 , a large field enhancement factor, a high FEE J e of 2.6 mA cm −2 , and long lifetime stability of 438 min. Such an enhancement in the FEE originates from the unique materials combination, resulting in good electron transport from the graphene phases and efficient FEE of electrons from the sharp edges on the nanowalls. The prospective application of these materials is displayed by employing these hybrids as cathodes in a microplasma device ensuing a low threshold voltage of 160 V and high plasma stability of 140 min, which confirms the role of these hybrid structured nanowalls in the enhancement of electron emission.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2019 - 2019 Compound Semiconductor Week (CSW)