Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-10-07 |
| Journal | ACS Applied Electronic Materials |
| Authors | Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Burcu Ercan, Srabanti Chowdhury |
| Institutions | Stanford University, University of California, Davis |
| Citations | 15 |
Abstract
Section titled āAbstractāWe report the first demonstration of a high-temperature-tolerant complementary field-effect transistor (FET) inverter using a monolithic integration of n-channel gallium nitride (GaN) and p-channel diamond. The operation of the inverter up to 250 Ā°C was recorded. A key feature of this work originates from the successful epitaxial growth of p-channel hydrogen-terminated polycrystalline diamond FET on an AlGaN/GaN high-electron-mobility-transistor structure, which then could be coprocessed to realize the inverter. The device stability in the diamond FET was achieved with a ā¼45 nm-thick atomic layer deposition of Al2O3 at 450 Ā°C, serving as the gate dielectric as well as passivation for both diamond and GaN transistors. The process window of the coprocessing diamond and AlGaN/GaN was explored extensively to current match the two FETs.