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Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors

MetadataDetails
Publication Date2021-10-05
AuthorsYoshihiro Koga, Shunsuke Yamada, Shuji Tanaka, Kazunari Kurita
InstitutionsTohoku University, Sumco Corporation (Japan)

We proposed the fabrication of the laminated wafer with the conductive diamond layer as an alternative SOI wafer for micro-electro mechanical systems (MEMS) sensors by chemical vapor deposition (CVD) and surface-activated bonding (SAB), in order to prevent the charge-up of devices on a BOX layer during plasma treatments. We demonstrated that the use of this laminated wafer could be deposited the boron-doped diamond layer and be bonded a silicon wafer (layer) at room temperature without a thermal stress. Therefore, we believe that this laminated wafer can contribute to the improvement of MEMS sensors as an alternative SOI wafer.