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6CCVD Research

Fabrication and Characterization of GaN/Diamond bonding interface

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2021-10-05
AuthorsAyaka Kobayashi, Yasuo Shimizu, Yutaka Ohno, S. W. Kim, Koichi Koyama
InstitutionsSaga University, Osaka City University

Abstract

Section titled ā€œAbstractā€

Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

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