Research on suppressing brittle fracture and implementing ductile mode cutting for improving surface quality at silicon wafers manufacturing
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-10-01 |
| Journal | Journal of Physics Conference Series |
| Authors | A. M. Kovalchenko, E. A. Pashchenko, D. O. Savchenko |
| Institutions | V. Bakul Institute for Superhard Materials, Frantsevich Institute for Problems in Materials Science |
| Citations | 5 |
Abstract
Section titled āAbstractāAbstract Single crystal silicon is an important basic material used to manufacture electronic and photovoltaic devices. Ductile mode of diamond wire sawing is a promising method for silicon wafering in order to produce wafers with minimal surface damage. To achieve ductile mode, the correct applying of cutting parameters and careful wire design is necessary. This study investigates the scratching of monocrystalline silicon by the abrasive particles of different geometry, which simulates the material removal process in diamond wire sawing. Diamonds, crushed and spherical tungsten carbide (WC) particles served as abrasives. Experiments show that spherical abrasives enhance ductile mode cutting significantly decreasing brittle damage when compared to irregular shape particles. Spherical WC particles permit to increase the critical load and critical cut depth of ductile-to-brittle transition from 5 to 10 times. The depth of the damaged subsurface layer decreased from 5 Āµm to 0.2 Āµm due to the absence of brittle cracks. A uniform regular distribution and appropriate suitable density of abrasive particles is obligatory for cracking reduction. For that, the method of diamond particles uniform deposition with the controlled density by a polymer binder combining high modulus and adhesive capacity with good flexibility was elaborated. The method includes preliminary diamond particles fixation on a thin resin layer providing high uniformity and subsequent strong fixation by a thicker resin layer. The research on ovalization of diamond particles was performed for smoothening cutting edges. The method is based on the activation of the graphitization process at sharp edges of particles under the action of metal salts at increased temperatures.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2016 - Wire sawing technology: a state-of-the-art review [Crossref]
- 2018 - Diamond wire sawing of solar silicon wafers: a sustainable manufacturing alternative to loose abrasive slurry sawing [Crossref]
- 2019 - Comparative analysis of mechanical strength of diamond-sawn silicon wafers depending on saw mark orientation, crystalline nature and thickness [Crossref]
- 2020 - Mechanical strength problem of thin silicon wafers (120 and 140 Ī¼ m) cut with thinner diamond wires (Si kerf 120ā 100 Ī¼ m) for photovoltaic use [Crossref]
- 2017 - Mechanisms of material removal and subsurface damage in fixed-abrasive diamond wire slicing of single-crystalline silicon [Crossref]
- 2018 - A comprehensive study on slicing processes optimization of silicon ingot for photovoltaic applications [Crossref]
- 2020 - Characterization of electroplated diamond wires and the resulting workpiece quality in silicon sawing [Crossref]
- 2019 - Evaluation of fixed abrasive diamond wire sawing induced subsurface damage of solar silicon wafers [Crossref]
- 2019 - The effect of cut depth and distribution for abrasives on wafer surface morphology in diamond wire sawing of PV polycrystalline silicon [Crossref]
- 2020 - Effect of cutting parameters on surface integrity of monocrystalline silicon sawn with an endless diamond wire saw [Crossref]