Skip to content
6CCVD Research

Voltage-induced modulation in the charge state of Si-vacancy defects in diamond using high voltage nanosecond pulses

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2021-10-25
JournalApplied Physics Letters
AuthorsSizhe Weng, Christopher Coleman, Indu Aravind, Yu Wang, Bofan Zhao
InstitutionsUniversity of Southern California, University of the Witwatersrand
Citations2

Abstract

Section titled ā€œAbstractā€

Silicon-vacancy defects have been identified as a promising optical transition for quantum communications, quantum control, and quantum information processing. In the work presented here, we demonstrate a voltage-controlled mechanism by which the photoluminescent (PL) emission from silicon-vacancy (Si-V) defects in diamond can be modulated. In particular, we can selectively produce emission from the negatively charged state of this defect (i.e., Si-Vāˆ’), which exhibits narrow (Ī“ = 4 nm) emission at 738 nm at low laser power. This approach uses high voltage (2-5 kV) nanosecond pulses applied across top and bottom electrodes on a 0.5 mm thick diamond substrate. In the absence of high voltage pulses, we observe no emission at 738 nm. This feature increases monotonically with peak pulse voltage, pulse repetition rate (i.e., frequency), and incident laser intensity. We observe saturation of the PL intensity for pulse voltages above 3.2 kV and frequency above 100 Hz. Based on electrostatic simulations, we estimated the local electric field intensity near the tip of the Cu electrode to be 2.8 Ɨ106 V/cm at these voltages. However, as a function of laser power, we observe a linear dependence of PL intensity without saturation. These saturating and non-saturating behaviors provide important insight into the voltage-induced charging mechanisms and kinetics associated with this process.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2011 - Diamond-based single-photon emitters [Crossref]
  2. 2013 - The nitrogen-vacancy colour centre in diamond [Crossref]
  3. 2014 - Deterministic electrical charge-state initialization of single nitrogen-vacancy center in diamond [Crossref]
  4. 2019 - Electronic structure of the neutral silicon-vacancy center in diamond [Crossref]
  5. 2014 - Optical signatures of silicon-vacancy spins in diamond [Crossref]
  6. 2014 - Electronic structure of the negatively charged silicon-vacancy center in diamond [Crossref]
  7. 2014 - Indistinguishable photons from separated silicon-vacancy centers in diamond [Crossref]
  8. 2016 - An integrated diamond nanophotonics platform for quantum-optical networks [Crossref]
  9. 2011 - Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium [Crossref]
  10. 2009 - Spatial localization of Si-vacancy photoluminescent centers in a thin CVD nanodiamond film [Crossref]

Reads Similar to This

Influence of temperature on the electrochemical window of boron doped diamond - a comparison of commercially available electrodes Burst eddy current testing with diamond magnetometry The diamondā€“silicon carbide composite SkeletonĀ® as a promising material for substrates of intense X-ray beam optics