Influence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2021-12-08 |
| Journal | Nanotechnology |
| Authors | Srinivasu Kunuku, Mateusz Ficek, Aleksandra Wieloszyńska, Magdalena Tamulewicz‐Szwajkowska, Krzysztof Gajewski |
| Institutions | University of Gdańsk, Polish Academy of Sciences |
| Citations | 9 |
Abstract
Section titled “Abstract”Abstract Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ∼ 0.02 with three different B/C doping concentrations of B/C ∼ 2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74-4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ∼ 7500 ppm) have shown the low resistance value ∼9.29 Ω for CVD diamond/SCD IIa, and the resistance value ∼16.55 Ω for CVD diamond/SCD Ib samples.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 1999 - Nanocrystalline diamond films [Crossref]
- 1988 - Metastable growth of diamond and ‘diamondlike’ phases [Crossref]
- 2007 - Diamond for bio-sensor applications [Crossref]
- 1989 - Defect-induced stabilization of diamond films [Crossref]
- 1999 - Doping of diamond [Crossref]
- 2017 - Analysis of boron in diamond with UV photoluminescence [Crossref]
- 2011 - Creation and nature of optical centres in diamond for single-photon emission—overview and critical remarks [Crossref]
- 2010 - Fabrication of single optical centres in diamond—a review [Crossref]
- 2009 - Diamonds with a high density of nitrogen-vacancy centers for magnetometry applications [Crossref]
- 2014 - Nitrogen-vacancy centers in diamond: nanoscale sensors for physics and biology [Crossref]