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Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-01-24
JournalApplied Physics Letters
AuthorsZeyang Ren, Senchuan Ding, Zhenfang Liang, Qi He, Kai Su
InstitutionsWuhu Institute of Technology, Xidian University
Citations8

Abstract

Section titled ā€œAbstractā€

A hydrogen terminated diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectrics was fabricated on a single crystalline diamond sample. Compared to a device with single MoO3 layer gate dielectrics, the device performance was improved due to the improvement in the gate voltage, which benefited from the doubly stacked gate dielectric. The device with 4 Ī¼m gate length shows a maximum output current of 118.67 mA/mm and an ultra-low resistance of 36.15 Ī© mm at the gate voltage of āˆ’5 V. In addition, the device shows a maximum transconductance of 35 mS/mm. These results indicate that the dielectric with high work function has high potential to achieve a high-performance diamond MOSFET.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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  2. 2017 - Logic circuits with hydrogenated diamond field-effect transistors [Crossref]
  3. 1992 - Hydrogenating effect of single-crystal diamond surface [Crossref]
  4. 2013 - Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study [Crossref]
  5. 2012 - Thermal stabilization of hole channel on H-terminated diamond surface by using atomic-layer-deposited Al2O3 overlayer and its electric properties [Crossref]
  6. 2018 - High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric [Crossref]
  7. 2012 - Diamond field-effect transistors with 1.3 A/mm drain current density by Al2O3 passivation layer [Crossref]
  8. 2018 - A high frequency hydrogen-terminated diamond MISFET with fT/fmax of 70/80 GHz [Crossref]
  9. 2006 - Diamond FET using high-quality polycrystalline diamond with fT of 45 GHz and fmax of 120 GHz [Crossref]
  10. 2019 - 3.8 W/mm RF power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity [Crossref]

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