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Diamond semiconductor and elastic strain engineering

MetadataDetails
Publication Date2022-02-01
JournalJournal of Semiconductors
AuthorsChaoqun Dang, Anliang Lu, Heyi Wang, Hongti Zhang, Yang Lü
Citations1

Abstract Diamond, as an ultra-wide bandgap semiconductor, has become a promising candidate for next-generation microelectronics and optoelectronics due to its numerous advantages over conventional semiconductors, including ultrahigh carrier mobility and thermal conductivity, low thermal expansion coefficient, and ultra-high breakdown voltage, etc. Despite these extraordinary properties, diamond also faces various challenges before being practically used in the semiconductor industry. This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes, high-power/high-frequency field-effect transistors, MEMS/NEMS, and devices operating at high temperatures. Following that, we will discuss recent developments to address scalable diamond device applications, emphasizing the synthesis of large-area, high-quality CVD diamond films and difficulties in diamond doping. Lastly, we show potential solutions to modulate diamond’s electronic properties by the ā€œelastic strain engineeringā€ strategy, which sheds light on the future development of diamond-based electronics, photonics and quantum systems.

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