MOSFETs on (110) C–H Diamond - ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-02-09 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Benjian Liu, Te Bi, Yu Fu, Ken Kudara, Shoichiro Imanishi |
| Institutions | Waseda University, Harbin Institute of Technology |
| Citations | 35 |
Abstract
Section titled “Abstract”Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al<sub>2</sub>O<sub>3</sub>/(110) C–H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al<sub>2</sub>O<sub>3</sub> layer were made in this study. The microstructure of Al<sub>2</sub>O<sub>3</sub> on (110) C–H diamond was analyzed. Abrupt interface of ALD Al<sub>2</sub>O<sub>3</sub>/C–H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.