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6CCVD Research

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-03-14
JournalApplied Physics Letters
AuthorsKelly Woo, Mohamadali Malakoutian, Benjamin A. Reeves, Srabanti Chowdhury
InstitutionsStanford University
Citations14

Abstract

Section titled ā€œAbstractā€

Diamond is an ultrawide-bandgap semiconductor suitable for high power devices that require high current carrying capacity, high blocking voltages, and smaller form factors. We investigated various diamond structures for extrinsic photoconductive semiconductor switches, including an insulating high-pressure high-temperature type Ib (highly nitrogen-doped) substrate, a chemical vapor deposited (CVD) type IIa (unintentionally doped) substrate, a CVD grown semiconducting boron-doped epilayer on a type IIa substrate, and boron-implanted type Ib and IIa substrates. Using these samples, we fabricated and characterized planar interdigitated photoconductive switches with 30 Ī¼m, electrode gaps. 532 and 1064 nm Nd:YAG laser pulses with energies up to 3.5 mJ/pulse were used to trigger the switches. Photoresponses were measured at bias voltages ranging from 10 to 100 V, corresponding to electric fields of 3.3-33 kV/cm. In this field range, the type Ib device exhibited the highest average on/off-state current ratio, on the order of 1011, when triggered with 0.8 mJ/pulse, 532 nm laser pulses. However, only the CVD grown boron-doped epilayer and boron implanted IIa devices showed decent sensitivity to 1064 nm.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 1984 - Chapter 12ā€”Optoelectronic switch for pulsed power
  2. 2003 - 4H-SiC photoconductive switching devices for use in high-power applications [Crossref]
  3. 2008 - Diamond as an electronic material [Crossref]
  4. 1983 - High voltage optoelectronic switching in diamond [Crossref]
  5. 1983 - A diamond opto-electronic switch [Crossref]
  6. 1990 - Photoconductive switching in diamond under high bias field [Crossref]
  7. 2020 - Photoconductive switch with high sub-bandgap responsivity in nitrogen-doped diamond [Crossref]
  8. 1995 - Electrical contacts to diamond [Crossref]
  9. 2000 - Optical detection of defect centers in CVD diamond [Crossref]
  10. 2009 - Generation and transport of photoexcited electrons in single-crystal diamond [Crossref]

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