AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-03-08 |
| Journal | Applied Physics Express |
| Authors | Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani |
| Institutions | National Institute for Materials Science, Osaka City University |
| Citations | 9 |
Abstract
Section titled āAbstractāAbstract We fabricate AlGaN/GaN high electron mobility transistors (HEMTs) on diamond substrates by transferring 8 Ī¼ m heterostructures grown on 3C-SiC/Si templates and subsequently applying the conventional device process steps. No exfoliation of 3C-SiC/diamond bonding interfaces is observed during 800 Ā°C annealing, the essential step for forming ohmic contacts on nitrides. The thermal resistance of HEMTs on diamond is 35% of that of HEMTs on Si, which is assumed to be the origin of smaller negative drain conductance in on-diamond HEMTs. The results imply that the bonding-first process is applicable for fabricating low-thermal-resistance HEMTs with thick nitride layers.