Ga2O3 – diamond for next generation power electronics
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-03-06 |
| Journal | 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |
| Authors | Abhishek Mishra, Zeina Abdallah, Hyun‐Seop Kim, James W. Pomeroy, Michael J. Uren |
| Institutions | University of Bristol |
| Citations | 1 |
Abstract
Section titled “Abstract”Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> , with its ultra-wide bandgap and melt-grown substrates, offers the potential for low-cost >1 kV electronics. However, numerous challenges need to be overcome, in particular the lack of good p-doped Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> and its low thermal conductivity. The potential for overcoming these intrinsic limitations of Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> with integrated Ga <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>2</inf> O <inf xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>3</inf> - diamond junctions for power devices is discussed.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2018 - 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current