n-Type Diamond Metal-Semiconductor Field-Effect Transistor With High Operation Temperature of 300°C
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-03-02 |
| Journal | IEEE Electron Device Letters |
| Authors | Takehiro Shimaoka, Meiyong Liao, Satoshi Koizumi |
| Institutions | National Institute for Materials Science |
| Citations | 16 |
Abstract
Section titled “Abstract”The development of diamond power devices has been hindered due to the challenge in the achievement of n-type diamond electronic devices. In this study, we report the phosphorus-doped n-type diamond metal-semiconductor field-effect transistor (MESFET). We selectively grew heavily phosphorus doped diamond layer to improve the ohmicity of the source and drain contacts. The MESFET showed clear pinch-off and saturation characteristics. The transconductance was improved to be 0.1 <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$\mu \text{S}$ </tex-math></inline-formula> /mm by 100 times from room temperature to 300°C.