A physical model of a diamond vertical Schottky diode including incomplete ionization and thermal effects
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2025-02-25 |
| Journal | Journal of Physics D Applied Physics |
| Authors | Shang Hong, Yanfeng Jiang |
Abstract
Section titled āAbstractāAbstract Diamond devices show particular supreme characteristics, including high thermal conductivity, high breakdown voltage, radiation hardness, etc and attracts attention from both industrial and academic communities to investigate their applications in modern electronics. Currently, the incumbent physical model of the diamond device is assembled following the silicon deviceās strategies without considering many unique physical phenomena in diamond materials, which makes the simulation inconsistent with the experimental results. In this paper, a diamond device model including the unique properties of incomplete ionization and thermal effects is developed. The effect of incomplete ionization of boron atoms on the energy band distribution and the hole concentration in diamond materials is studied. The thermal effect on both the ionized hole concentration and the hole mobility is also investigated. A self-heating effect is developed to describe the thermal effect in a power device with a high current. The diamond device model is set up, including incomplete ionization and thermal effects, which are used in the simulation of a diamond vertical Schottky diode. The simulation results are consistent with the experimental data. Therefore, the model including the specific characteristics of the diamond material would be a promising platform for the investigation of the diamond device in the future.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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