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6CCVD Research

Advancement of GaN HEMT Power Electronics on Diamond Substrate

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-05-31
Journal2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm)
AuthorsMei-Chien Lu
Citations1

Abstract

Section titled ā€œAbstractā€

Wide bandgap power electronics have been commercialized for many applications. Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) has superior performance in high frequency applications. The outstanding concerns are the self-heating and thermal dissipation due to high current density through the piezoelectric channel exhibiting as a two-dimensional electron gas (2DEG). Substrates, silicon or silicon carbide, support GaN epitaxial processing limit the thermal transport ability. Alternative substrate materials for device level heat spreader with high thermal conductivity have been considered for substrate transfer technology to extend the application ranges. Among them, diamond has the highest thermal conductivity but is challenged by high cost and fabrication difficulties. Although GaN HEMT on Diamond has been studied for many years, the challenges remain in many aspects for implementation. This study summarizes and analyzes the crucial factors of materials, processing, and integration schemes of diamond heat spreader technologies in recent advancement. The effective thermal boundary resistance between GaN and Diamond is chosen as a parameter for comparisons. Advantages and disadvantages of direct polycrystalline growth and direct bonding methods are also discussed. The impacts on device performances, sizes, costs, the preferable applications gaining benefits and momentum, the manufacturing challenges, and the desired future improvement are also highlighted.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2019 - Polycrystalline Diamond Characterisations for High End Technologies
  2. 2017 - Fujitsu Technology Bonds Single Crystal Diamond and SiC at Room Temperature; Enables Boost to Radar Performance

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