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6CCVD Research

Charge transport properties of intrinsic layer in diamond vertical pin diode

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2017-05-22
JournalApplied Physics Letters
AuthorsTakehiro Shimaoka, Daisuke Kuwabara, Asuka Hara, Toshiharu Makino, M. Tanaka
InstitutionsNational Institute of Advanced Industrial Science and Technology, The Graduate University for Advanced Studies, SOKENDAI
Citations8

Abstract

Section titled ā€œAbstractā€

Diamond is hoped to be utilized in ultimate power electronic devices exhibiting ultra-high blocking voltages. For practical device formation, it is important to characterize the electric properties to precisely simulate carrier transport and to practically design optimum device structures. In this study, we experimentally evaluated the charge transport properties of intrinsic layers in diamond vertical pin diodes using alpha-particle induced charge distribution measurements. The charge collection efficiencies were 98.1 Ā± 0.6% for a {111} pin diode and 96.9 Ā± 0.6% for a {100} pin diode, which means that almost all generated charges are collected accordingly equivalent to conventional Silicon pin photodiodes. Mobility-lifetime (Ī¼Ļ„) products of holes were (2.2 Ā± 0.3) Ɨ 10āˆ’6 cm2/V for {111} and (1.8 Ā± 0.1) Ɨ 10āˆ’5 cm2/V for {100} diamond pin diodes.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2008 - Physics and Applications of CVD Diamond [Crossref]

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