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6CCVD Research

Compensation of p-type doping in Al-doped 4H-SiC

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-05-10
JournalJournal of Applied Physics
AuthorsYuanchao Huang, Rong Wang, Yiqiang Zhang, Deren Yang, Xiaodong Pi
InstitutionsZhejiang University, Zhengzhou University
Citations20

Abstract

Section titled ā€œAbstractā€

One of the major challenges of 4H-silicon carbide (4H-SiC) is that the preparation of low resistivity p-type 4H-SiC single crystals lags seriously behind that of low resistivity n-type 4H-SiC single crystals, hindering the development of important 4H-SiC power devices such as n-channel insulated gate bipolar transistors. In particular, the resistivity of p-type 4H-SiC single crystals prepared through the physical vapor transport technique can only be lowered to around 100 mĪ© cm. One of the key causes is the incomplete ionization of the p-type dopant Al with an ionization energy āˆ¼0.23 eV. Another factor is the compensating effect. It cannot simply assume nitrogen (N) is the sole compensatory center, since the number of the compensating center is larger than the concentration of N doping. In this work, we systematically investigate the compensation of native defects and self-compensation in Al-doped 4H-SiC. It is found that the positively charged carbon vacancies (VC2+) are also the dominant compensating centers in Al-doped 4H-SiC. When the Al concentration is in the range of 1016-1019 cmāˆ’3, the concentration of holes is lower by one order of magnitude than the Al concentration because of the compensation of VC2+. As the Al concentration exceeds 1020 cmāˆ’3, the concentration of holes is only in the order of magnitude of 1019 cmāˆ’3 owing to the dominant compensation of VC2+ and supplementary self-compensation of interstitial Al (Ali3+). We propose that the passivation of VC2+ as well as quenching is effective to enhance the hole concentration of Al-doped 4H-SiC.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 2014 - Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

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