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High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET

MetadataDetails
Publication Date2022-05-16
JournalIEEE Electron Device Letters
AuthorsShaili Falina, Hiroshi Kawarada, Asrulnizam Abd Manaf, Mohd Syamsul
InstitutionsWaseda University, Universiti Sains Malaysia
Citations9

This letter reports on the high voltage operations and high temperature operations of the transparent polycrystalline diamond field-effect transistor (TPD-FET). The devices were fabricated with a wide range of wide gate-drain lengths ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${L}{\textit {GD}}$ </tex-math></inline-formula> ) and a thick Al <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;2&lt;/sub> O <sub xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”&gt;3&lt;/sub> passivation layer of 400 nm. Voltage breakdowns of more than 1000 V have been observed in high voltage measurements. The temperature dependence and performance of the devices at RT to 673 K were also shown. As the temperature was varied, the maximum drain currents ( <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${I}{{D max}}$ </tex-math></inline-formula> ) for different <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>${L}_{\textit {GD}}$ </tex-math></inline-formula> devices increased significantly from 33.8 mA/mm - 72.8 mA <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$/$ </tex-math></inline-formula> mm to 86.0 mA/mm - 116.4 mA <inline-formula xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”> <tex-math notation=“LaTeX”>$/$ </tex-math></inline-formula> mm in terms of absolute values. The findings demonstrate the advantages and potential of diamond-based devices in high temperature conditions.