Diamond Power Electronics - From 1kV towards 10kV Breakdown Voltage
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-06-01 |
| Authors | Ziduan Han, Hsuan-Ping Lee, B. Bayram, C. Bayram |
| Institutions | Middle East Technical University, University of Illinois Urbana-Champaign |
| Citations | 1 |
Abstract
Section titled “Abstract”The rapidly growing demand for power electronics to rout, control, and convert electrical power motivates recent research into devices based on ultra-wide-bandgaps semiconductors. Diamond-based semiconductor devices have drawn increasing attention in high-power applications due to diamond’s extraordinary electrical and physical properties. It has a 5.5 eV band gap and over 7.7MV cm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>−1</sup> breakdown field. Diamond is also one of the best thermal conductors with thermal conductivity over 2200 Wm <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>−1</sup> k <sup xmlns:mml=“http://www.w3.org/1998/Math/MathML” xmlns:xlink=“http://www.w3.org/1999/xlink”>−1</sup> , making it an ideal material for high power applications where heat dissipation is challenging [1]. To demonstrate diamond’s advantages in power electronics, diamond power diodes and transistors are fabricated with breakdown voltages much higher than devices based on other wide band-gap materials.