Formation of p-n+diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-06-06 |
| Journal | Materials Research Letters |
| Authors | Eslam Abubakr, Shinya Ohmagari, Abdelrahman Zkria, Hiroshi Ikenoue, Julien Pernot |
| Institutions | Centre National de la Recherche Scientifique, National Institute of Advanced Industrial Science and Technology |
| Citations | 15 |
Abstract
Section titled āAbstractāWe report the fabrication of p-n+ diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form the p-n+ homojunction. The current-voltage measurements at room temperature confirmed high conductivity of the induced n+ layer and showed exceptional rectification properties with an ideality factor of 1.07, excellent low on-resistance of 3.7 Ć 10ā2 Ī©cm2, and current density over 260 Acmā2 at forward-biasing of 10 V. Furthermore, undetectable leakage-current provides a rectification ratio exceeding 1010 at Ā±6 V, promoting the junction in UV detection applications.