Schottky barrier diodes fabricated on high-purity type-IIa CVD diamond substrates using an all-ion-implantation process
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2021-04-12 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Seiya Shigematsu, Toshiyuki Oishi, Yuhei Seki, Yasushi Hoshino, Jyoji Nakata |
| Institutions | Saga University, Kanagawa University |
| Citations | 13 |
Abstract
Section titled āAbstractāAbstract We fabricated a Schottky barrier diode (SBD) on ion-implanted diamond substrates. The SBDs contained lightly doped regions under the Schottky electrodes and heavily doped regions beneath the Ohmic contacts. The current remained below 6.4 Ć 10 ā11 A at reverse biases of up to 10 V, but increased sharply at a forward bias of ā3.5 V. The Schottky barrier height and ideality factor under forward bias were estimated to be 1.1 eV and 10, respectively. The hole concentrations obtained by measuring the capacitance at various supplied voltages were in good agreement with the values obtained from the Hall effect measurements.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1986 - Ion implantation for VLSI