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6CCVD Research

Phase field modeling of dislocations and obstacles in InSb

At a Glance

Section titled “At a Glance”
MetadataDetails
Publication Date2022-07-11
JournalJournal of Applied Physics
AuthorsHyojung Kim, Alexandra Zimmerman, Irene J. Beyerlein, Abigail Hunter
InstitutionsLos Alamos National Laboratory, Stanford University
Citations6

Abstract

Section titled “Abstract”

We present a phase-field dislocation dynamics (PFDD) model informed by first-principle calculations to elucidate the competitive dislocation nucleation and propagation between the glide and shuffle sets in InSb diamond cubic crystal. The calculations are directly informed with generalized stacking fault energy curves on the (111) slip plane for both the “glide set,” with the smaller interplanar spacing, and the “shuffle set,” with the larger interplanar spacing. The formulation also includes elastic anisotropy and the gradient term associated with the dislocation core. The PFDD calculations show that under no stress the equilibrium structure of screw glide set dislocations dissociates into Shockley partials, while those of the shuffle set dislocations do not dissociate, remaining compact. The calculated dislocation core widths of these InSb dislocations agree well with the measured values for other semiconductor materials, such as Si and GaN. We find that a shuffle set dislocation emits from a dislocation source at an applied stress about three times smaller than that needed to emit leading and trailing partials successively on the glide set plane. Once the partial dislocations in the glide set are emitted, they propagate faster than the shuffle set perfect dislocation at the same stress level.

Tech Support

Section titled “Tech Support”

Original Source

Section titled “Original Source”

References

Section titled “References”
  1. 1997 - Dislocation-free InSb grown on GaAs compliant universal substrates [Crossref]
  2. 2004 - High-speed InSb photodetectors on GaAs for mid-IR applications [Crossref]
  3. 2012 - In situ deformation of micro-objects as a tool to uncover the micro-mechanisms of the brittle-to-ductile transition in semiconductors: The case of indium antimonide [Crossref]
  4. 2010 - Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part I: Macroscopic aspects of the deformation [Crossref]
  5. 2010 - Plasticity of indium antimonide between −176°C and 400°C under hydrostatic pressure. Part II: Microscopic aspects of the deformation [Crossref]
  6. 2013 - Counting dislocations in microcrystals by coherent x-ray diffraction [Crossref]
  7. 2021 - Size-induced twinning in InSb semiconductor during room temperature deformation [Crossref]
  8. 2020 - Atomic-level calculations and experimental study of dislocations in InSb [Crossref]
  9. 2016 - Understanding dislocation mechanics at the mesoscale using phase field dislocation dynamics [Crossref]
  10. 2019 - Phase-field-based calculations of the disregistry fields of static extended dislocations in FCC metals [Crossref]

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