Skip to content
6CCVD Research

Top Heat Spreaders on GaN-based HEMT devices for improved thermal management

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-09-12
Journal2022 24th International Microwave and Radar Conference (MIKON)
AuthorsS.L. Delage, N. Michel, Jean-Claude Jacquet, Maziar Shakerzadeh, Edwin Hang Tong Teo
InstitutionsIII V Lab, UniversitƤt Ulm

Abstract

Section titled ā€œAbstractā€

We report an overview of GaN-based High Electron Mobility Transistor (HEMT) thermal management by giving additional heat flow from the top of RF power devices. Different strategies have been tried by our laboratory over the years. All of them have been based on parallel microelectronic processing scheme to preserve cost and high frequency operation. In this article, we present two previous experimental results tried in the past namely with nano-crystalline diamond layers and more recently using boron nitride films. Material and electrical DC and microwave results are presented.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 0 - Materials for Robust Gallium Nitride MORGAN Project Fact Sheet FP7 CORDIS European Commission (europa.eu)
  2. 0 - JAP
  3. 2010 - Diam. Rel. Mat
  4. 2019 - Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration Nature Communications
  5. 2012 - Improved GaN-based HEMT Performance by Nanocrystalline Diamond Capping 70th Device Research Conference

Reads Similar to This

Vibrational Investigation of Pressure-Induced Phase Transitions of Hydroxycarbonate Malachite Cu2(CO3)(OH)2 Introduction Preparation of boron doped diamond modified by iridium for electroreduction of carbon dioxide (CO2)