Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-10-05 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Shumiao Zhang, Juan Wang, Qi Li, Guoqing Shao, Genqiang Chen |
| Institutions | Xiāan Jiaotong University |
| Citations | 8 |
Abstract
Section titled āAbstractāA SnO2 thin layer was deposited between the diamond and Schottky electrode to fabricate the metal-insulator-semiconductor Schottky barrier diode (MIS-SBD). The current-voltage and current-voltage-temperature characteristics in the range from 25 Ā°C to 150 Ā°C of diamond SBD were investigated. The Schottky barrier height of MIS-SBD is 1.84 eV. Compared with metal-semiconductor (MS) SBD, the diamond MIS-SBD shows more stable values of barrier height and ideality factor as temperature increased. The difference in interface states density between MIS-SBD and MS-SBD is almost 2 orders of magnitude, and the breakdown voltage was increased from 102 to 123 V after introducing SnO2 layer. These results indicate that the MIS-SBD with SnO2 insulating layer shows a better performance.