Skip to content
6CCVD Research

Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-11-25
JournalJournal of Physics D Applied Physics
AuthorsHiroshi Kawarada
Citations22

Abstract

Section titled ā€œAbstractā€

Abstract Diamond is a wide bandgap semiconductor (bandgap: 5.5 eV). However, through impurity doping, diamond can become a p-type or n-type semiconductor. The minimum resistivity of p-type semiconductor diamond is less than 10 āˆ’3 Ī© cm, which is no more than that of silicon (Si). In contrast, the minimum resistivity of n-type diamond is as high as 10 3 Ī© cm. At present, the development of unipolar devices such as p-channel field-effect transistors (p-FETs) based on diamond is strongly anticipated. When the diamond surface is terminated using hydrogen (H) or Si atoms, the subsurface layer becomes a p-type accumulation layer or inversion layer that forms a two-dimensional hole gas (2DHG), which can then be used as a channel for a FET structure. As a p-FET, the performance of this device approaches that of other wide bandgap semiconductor n-channel FETs. One of the main advantages of this diamond p-FET is that the p-type accumulation or inversion layer is formed natively on the hydrogen terminated (C-H) diamond. This review describes the low metal contact resistance that induces 2DHG formation on the C-H diamond surface, on which negatively charged sites are formed. The negatively charged surface model explains the 2DHG formation clearly based on the FETā€™s operating mechanism. Recent advances in 2DHG FETs are also discussed, particularly in terms of their current densities of >1 A mm āˆ’1 and their high frequency performance. Finally, we propose two types of complementary high-voltage circuit that combine diamond p-FETs with other wide bandgap semiconductor n-FETs.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
  1. 1965 - Physical limitations on frequency and power parameters of transistors
  2. 1972 - Figure of merit for semiconductors for high-speed switches [Crossref]
  3. 1980 - Electron effective masses and lattice scattering in natural diamond [Crossref]
  4. 2006 - Chemical vapor deposition of homoepitaxial diamond films [Crossref]
  5. 2010 - Hall hole mobility in boron-doped homoepitaxial diamond [Crossref]
  6. 1994 - Enhancement mode metalā€semiconductor field effect transistors using homoepitaxial diamonds [Crossref]
  7. 1996 - Hydrogen-terminated diamond surfaces and interfaces [Crossref]
  8. 1996 - Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurements [Crossref]
  9. 2004 - Electronic properties of the 2D-hole accumulation layer on hydrogen terminated diamond [Crossref]
  10. 2008 - Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance [Crossref]

Reads Similar to This

Simulation investigation of effects of substrate and thermal boundary resistance on performances of AlGaN/GaN HEMTs Nanoscale Dynamic Readout of a Chemical Redox Process Using Radicals Coupled with Nitrogen-Vacancy Centers in Nanodiamonds Optics with diamond-like-carbon overcoat (DOC) provide improved optical performance over traditional DLC films and better cleanability than standard PVD coatings