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6CCVD Research

Pseudovertical Schottky Diodes on Heteroepitaxially Grown Diamond

At a Glance

Section titled ā€œAt a Glanceā€
MetadataDetails
Publication Date2022-11-13
JournalCrystals
AuthorsJĆ¼rgen Weippert, Philipp Reinke, Fouad Benkhelifa, Heiko Czap, Christian Giese
InstitutionsFraunhofer Institute for Applied Solid State Physics
Citations7

Abstract

Section titled ā€œAbstractā€

Substrates comprising heteroepitaxially grown single-crystalline diamond epilayers were used to fabricate pseudovertical Schottky diodes. These consisted of Ti/Pt/Au contacts on pāˆ’ Boron-doped diamond (BDD) layers (1015-1016 cmāˆ’3) with varying thicknesses countered by ohmic contacts on underlying p+ layers (1019-1020 cmāˆ’3) on the quasi-intrinsic diamond starting substrate. Whereas the forward current exhibited a low-voltage shunt conductance and, for higher voltages, thermionic emission behavior with systematic dependence on the pāˆ’ film thickness, the reverse leakage current appeared to be space-charge-limited depending on the existence of local channels and thus local defects, and depending less on the thickness. For the Schottky barriers Ļ•SB, a systematic correlation to the ideality factors n was observed, with an ā€œidealā€ n = 1 Schottky barrier of Ļ•SB = 1.43 eV. For the best diodes, the breakdown field reached 1.5 MV/cm.

Tech Support

Section titled ā€œTech Supportā€

Original Source

Section titled ā€œOriginal Sourceā€

References

Section titled ā€œReferencesā€
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