Review on Wide Band Gap Semiconductor
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-11-26 |
| Journal | 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) |
| Authors | Arnima Das, Maitreyi Ray Kanjilal, Moumita Mukherjee, Arpita Santra |
| Institutions | Adamas University, Maulana Abul Kalam Azad University of Technology, West Bengal |
| Citations | 12 |
Abstract
Section titled āAbstractāWide Band Gap semiconductor materials have recently attracted the attention of the researchers for developing future energy saving society, by designing efficient switch, attenuator and power electronic devices. The large band difference of the wide band gap materials allows the designer to develop high frequency, high power, short wavelength application-based devices, which shows thermal stability in high temperature, too. Among different wide band gap materials SiC and GaN are commonly used materials for developing high quality, crack free surface of the device as their matching substrates are commonly available in the market. On the other hand, some other wide Band Gap materials like diamond, Graphene, AlN, BN, CuO, ZnO have also come in focus due to their promising functions, especially for power-device applications. In some literature review, it has been found that device characteristics obtained from these materials are quite comparable with the traditional Si based devices, and in some cases these new material shows better performance than Si. Though, some unknown defects and interface properties may be associated with these materials, which can be addressed after a thorough survey of their functions.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 1995 - Power Electronics
- 2006 - Solid State Electronic Devices
- **** - Wide bandgap semiconductors for utility applications