Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-12-31 |
| Journal | Functional Diamond |
| Authors | Masataka Imura, M. Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga |
| Institutions | National Institute of Advanced Industrial Science and Technology, High Energy Accelerator Research Organization |
| Citations | 2 |
Abstract
Section titled āAbstractāThe response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally doped insulating diamond epilayer grown on a heavily boron-doped p+-diamond (100) conductive substrate by microwave plasma chemical vapor deposition. The vertical-type SBPDs were constructed of semitransparent tungsten carbide (WC) Schottky contact on the top of the device and a WC/titanium ohmic contact on the bottom. The SBPDs were operated to detect the DUV light and protons in zero-bias photovoltaic mode. The spectral response of the SBPDs showed that the peak wavelength was at 182 nm with a sensitivity of 46 Ā± 1 mA/W. The response speed was shorter than 1 sec, with a negligible charge-up effect and persistent photoconductivity. The SBPDs showed a stable response upon the irradiation by 172-nm xenon excimer lamp with 70 mW/cm2 for 200 hrs and 70 MeV protons for the dose of 10 MGy, corresponding to a non-ionizing energy loss of 1.4 Ć 1016 MeV neq/cm2.