Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2022-12-03 |
| Journal | 2022 International Electron Devices Meeting (IEDM) |
| Authors | Rohith Soman, Mohamadali Malakoutian, Bhawani Shankar, D. Field, Emre Akso |
| Institutions | Georgia Institute of Technology, University of Maryland, College Park |
| Citations | 21 |
Abstract
Section titled āAbstractāA novel all-around heat spreader for Nitrogenpolar GaN HEMTs is implemented by integrating it with CVD grown polycrystalline (PC) diamond to facilitate hot spot removal at the device level which is often a source of premature breakdown. Nearly isotropic diamond growth enabled a high in-plane thermal conductivity (TC). Using a temperature dependent gate resistance method, devices with 500 nm thick all-around diamond, exhibited 98 Ā± 19 Ā°C (measured on multiple devices over the wafer) lower gate electrode temperature at 9.5 W/mm DC power compared to the control devices without diamond. The diamond integration did not lead to any degradation in the dispersion behavior. Furthermore, thermo-reflectance imaging and IV thermometry were used to characterize the thermal behavior of all-around diamond heat spreader which validated gate resistance method results showing similar temperature reduction in channel compared to control sample.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- **** - Proc. IEEE
- **** - VLSI-DAT 2017
- 2001 - IEEE TMTT.
- 2021 - CGD
- **** - Tech. Dig. - IEEE CSIC
- **** - IEEE CSICS
- **** - ACS AMI
- **** - IEEE TED