Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
At a Glance
Section titled “At a Glance”| Metadata | Details |
|---|---|
| Publication Date | 2022-12-26 |
| Journal | Applied Physics Letters |
| Authors | Yuichi Oshima, Elaheh Ahmadi |
| Institutions | National Institute for Materials Science, University of Michigan |
| Citations | 49 |
Abstract
Section titled “Abstract”Ultra-wide-bandgap (UWBG) semiconductors, such as Ga2O3 and diamond, have been attracting increasing attention owing to their potential to realize high-performance power devices with high breakdown voltage and low on-resistance beyond those of SiC and GaN. Among numerous UWBG semiconductors, this work focuses on the corundum-structured α-Ga2O3, which is a metastable polymorph of Ga2O3. The large bandgap energy of 5.3 eV, a large degree of freedom in band engineering, and availability of isomorphic p-type oxides to form a hetero p-n junction make α-Ga2O3 an attractive candidate for power device applications. Promising preliminary prototype device structures have been demonstrated without advanced edge termination despite the high dislocation density in the epilayers owing to the absence of native substrates and lattice-matched foreign substrates. In this Perspective, we present an overview of the research and development of α-Ga2O3 for power device applications and discuss future research directions.
Tech Support
Section titled “Tech Support”Original Source
Section titled “Original Source”References
Section titled “References”- 2008 - Fundamentals of Power Semiconductor Devices
- 2020 - Gallium Oxide-Materials Properties, Crystal Growth, and Devices