High electro-mechanical coupling coefficient SAW device with ScAlN on diamond
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-01-25 |
| Journal | Japanese Journal of Applied Physics |
| Authors | Kazuki Hatashita, T. Tsuchiya, M. Okazaki, Masayuki Nakano, Sri Ayu Anggraini |
| Institutions | Kwansei Gakuin University, National Institute of Advanced Industrial Science and Technology |
| Citations | 11 |
Abstract
Section titled āAbstractāAbstract In this study, Sc concentration dependence of Sc x Al 1ā x N/AlN/poly-crystalline diamond/Si surface acoustic wave (SAW) characteristics at high Sc from 23.8% to 44.3% was investigated by fabricating one-port SAW resonator at high frequency. 3.8 GHz one-port resonator fabricated on Sc 0.43 Al 0.57 N showed an excellent performance of electro-mechanical coupling coefficient ( K 2 ) as high as 6.34% for 2nd mode Sezawa wave, which enables a wide bandwidth in high frequency applications. The temperature coefficient of frequency was approximately ā40 to ā50 ppm deg ā1 for the device fabricated with Sc concentration of 42.9%. This is a smaller value compared to conventional high K 2 bulk materials such as LiNbO 3 . As the result, a high K 2 6.34% material system at a higher Sc concentration of ScAlN/AlN/PCD was found to be possible at a high phase velocity of 7000 m s ā1 . Combined with the extremely high-power durability of diamond based device, high-power durable wideband SAW device at high frequency can be expected.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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