Efficient heat dissipation perovskite lasers using a high-thermal-conductivity diamond substrate
At a Glance
Section titled âAt a Glanceâ| Metadata | Details |
|---|---|
| Publication Date | 2023-02-28 |
| Journal | Science China Materials |
| Authors | Guohui Li, Zhen Hou, Yanfu Wei, Ruofan Zhao, Ting Ji |
| Institutions | Shanxi Electromechanical Design and Research Institute, Lund University |
| Citations | 17 |
| Analysis | Full AI Review Included |
Efficient Heat Dissipation Perovskite Lasers using a High-Thermal-Conductivity Diamond Substrate: Engineering Analysis
Section titled âEfficient Heat Dissipation Perovskite Lasers using a High-Thermal-Conductivity Diamond Substrate: Engineering AnalysisâExecutive Summary
Section titled âExecutive SummaryâThis research addresses the critical heat dissipation bottleneck preventing the commercial realization of electrically injected perovskite lasers by integrating the active material onto a diamond substrate.
- Core Value Proposition: Achieved efficient heat management in MAPbI3 nanoplatelet lasers by utilizing diamond, the material with the highest known thermal conductivity (Îș = 2400 W m-1 K-1).
- Thermal Performance: Demonstrated a record-low pump-density-dependent temperature sensitivity of ~0.56 ± 0.01 K cm2 ”J-1, which is one to two orders of magnitude lower than previous glass-based perovskite lasers.
- Optical Confinement Strategy: Introduced a thin SiO2 gap layer (100 nm optimal thickness) between the high-index MAPbI3 nanoplatelet (n ~2.56) and the diamond substrate (n ~2.40) to ensure strong vertical Total Internal Reflection (TIR).
- Laser Metrics: The optimized structure achieved a high Quality (Q) factor of ~1962 and a low lasing threshold of 52.19 ”J cm-2 under 343-nm femtosecond pulsed excitation.
- Implication for PLDs: The successful demonstration of efficient heat dissipation under optical pumping is a crucial step toward developing stable, high-current, electrically driven perovskite laser diodes (PLDs).
Technical Specifications
Section titled âTechnical Specificationsâ| Parameter | Value | Unit | Context |
|---|---|---|---|
| Substrate Thermal Conductivity (Diamond) | 2400 | W m-1 K-1 | Used for efficient heat spreading |
| Perovskite Thermal Conductivity (MAPbI3) | 1-3 | W m-1 K-1 | Low intrinsic value (bottleneck) |
| Lasing Quality Factor (Q) | ~1962 | Dimensionless | Achieved with 100-nm SiO2 gap |
| Lasing Threshold (Pth) | 52.19 | ”J cm-2 | Achieved with 100-nm SiO2 gap |
| Minimum Temperature Sensitivity | 0.56 ± 0.01 | K cm2 ”J-1 | P-dependent, 100-nm SiO2 gap on diamond |
| Perovskite Refractive Index (np) | ~2.56 | Dimensionless | MAPbI3 nanoplatelet |
| Diamond Refractive Index (ns) | ~2.40 | Dimensionless | Substrate |
| SiO2 Gap Layer Refractive Index (ngap) | ~1.454 | Dimensionless | Used to enhance TIR |
| Optimal SiO2 Gap Thickness | 100 | nm | Balances confinement and heat transfer |
| Excitation Wavelength | 343 | nm | Femtosecond pulsed laser source |
| Lasing Peak FWHM (Linewidth) | 0.42 | nm | Above threshold, 100-nm SiO2 gap |
| Maximum Temperature Increase (100 nm SiO2) | ~0.6 | K | Induced by pump absorption (52.86 to 53.90 ”J cm-2) |
| RMS Roughness (Pristine Diamond) | ~0.7 | nm | Ensures high thermal conduction efficiency |
Key Methodologies
Section titled âKey Methodologiesâ- Perovskite Synthesis: MAPbI3 nanoplatelets (target thickness ~80 nm) were grown on mica substrates using a Chemical Vapor Deposition (CVD) method.
- Substrate Preparation: Square diamond substrates were prepared with varying thicknesses of SiO2 gap layers (50 nm, 100 nm, 200 nm) to optimize the vertical refractive index contrast.
- Transfer Printing: The synthesized nanoplatelets were transferred from the mica to the SiO2-coated diamond using thermal release tapes, ensuring the preservation of the atomically smooth morphology required for high-Q Whispering Gallery Mode (WGM) cavities.
- Morphology Verification: Atomic Force Microscopy (AFM) confirmed the smooth surfaces of the pristine diamond (RMS roughness ~0.7 nm) and the transferred nanoplatelets (RMS roughness ~1.7 nm).
- Optical Pumping Setup: The devices were excited using a 343-nm femtosecond pulsed laser, with room temperature controlled precisely at 293 K (fluctuation less than 0.1 K).
- Thermal Characterization: Heat dissipation efficiency was quantified by monitoring the blue shift of the WGM resonant peak wavelength (λ0) as a function of increasing pump density (P). The shift is directly related to the temperature increase via the thermal-optic and thermal expansion coefficients.
- Simulation: Finite-element method simulations were used to model the electric field distribution and leakage field in the nanoplatelet-SiO2-diamond structures to optimize the SiO2 gap thickness for maximum confinement.
Commercial Applications
Section titled âCommercial ApplicationsâThe integration of high-thermal-conductivity diamond substrates with solution-processed perovskite lasers is critical for applications requiring high power density and thermal stability:
- Electrically Injected Lasers (PLDs): Directly addresses the primary hurdle for commercial perovskite laser diodes by mitigating Joule heating under high current injection, enabling stable, continuous-wave operation.
- High-Power Optoelectronics: Essential for high-brightness perovskite light-emitting diodes (LEDs) and photodetectors where localized heating limits device lifetime and efficiency.
- On-Chip Integrated Photonics: Diamond serves as an ideal heat spreader for dense integration of active photonic components (lasers, amplifiers) in compact, high-performance optical circuits.
- High-Speed Optical Communications: Provides the thermal stability necessary for perovskite-based lasers used in data centers and telecommunications, where high repetition rates generate significant heat.
- Micro-Display and Projection Systems: Enables the use of thermally stable, color-tunable perovskite micro-lasers for high-resolution displays and projection technologies.
- Thermal Management Solutions: The methodology of using a low-index gap layer to decouple optical confinement from thermal substrate choice can be applied to other solution-processed semiconductor systems (e.g., organic semiconductors) requiring external heat sinking.
View Original Abstract
Abstract Efficient heat dissipation that can minimize temperature increases in device is critical in realizing electrical injection lasers. High-thermal-conductivity diamonds are promising for overcoming heat dissipation limitations for perovskite lasers. In this study, we demonstrate a perovskite nanoplatelet laser on a diamond substrate that can efficiently dissipate heat generated during optical pumping. Tight optical confinement is also realized by introducing a thin SiO 2 gap layer between nanoplatelets and the diamond substrate. The demonstrated laser features a Q factor of âŒ1962, a lasing threshold of 52.19 ”J cm â2 , and a low pump-density-dependent temperature sensitivity (âŒ0.56 ± 0.01 K cm 2 ”J â1 ) through the incorporation of the diamond substrate. We believe our study could inspire the development of electrically driven perovskite lasers.