The preparation of silicon carbide and its corresponding properties for electronic packaging applications
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-03-06 |
| Authors | Xiaoli Zhang, Xiaoyi Zhang, Zhuo Wang, Liwei Mi, Wenjie Fan |
| Institutions | Beijing University of Technology, Zhongyuan University of Technology |
Abstract
Section titled āAbstractāTraditional packaging materials are suffering from poor high-temperature-using, however, the SiC own ideal coefficient of thermal expansion (CTE) and thermal conductivity (TC), and at the same time, it can be used in high temperatures meeting the requirement of the advanced electronic packaging. But traditionally, SiC is made at a high temperature and with a complex producing process. Some researchers are focused on SiC with some Al additions, but we know that Al will volatilize when the samples are heated over than melt-point, so this method would also strict its applications. Other works had been taken on diamond addition to realize packaging function, but this method needed a high-temperature infiltration process too. In fact, the non-method above was economic or convenient to manufacture in nowadays industry practice. Fortunately, a new way to gain dense SiC at a very low temperature in an open environment had been gotten by our group.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
Section titled āReferencesā- 2022 - Practical aspects of thermomechanical modeling in electronics packaging