Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-05-03 |
| Journal | IEEE Transactions on Electron Devices |
| Authors | Brian P. Downey, Shawn Mack, Andy Xie, D. S. Katzer, Andrew C. Lang |
| Institutions | United States Naval Research Laboratory, Qorvo (United States) |
| Citations | 6 |
Abstract
Section titled āAbstractāHere, we use the micro-transfer printing technique to demonstrate the device-level heterogeneous integration of two solid-state RF device technologies on the same interposer: GaN and GaAs high-electron-mobility transistors. The devices are released from their growth substrate using an epitaxial sacrificial layer while a thin polymer adhesion layer facilitates a strong bond between the target substrate and the compound semiconductor devices, allowing for post-transfer microfabrication processing. Transmission electron microscopy reveals no voids at the device/interposer interface and a polymer adhesion layer thickness of 5 Ā± 2 nm. No significant degradation in dc electrical characteristics is observed after device transfer for either device technology. Improvement in thermal performance of GaN devices was demonstrated when transferred to a diamond substrate, even with the thin polymer adhesion layer at the device/interposer interface, illustrating a pathway for enhanced thermal management for GaN and other high-output-power density semiconductor technologies. The ability to combine various solid-state technologies at the device level with high density provides an approach to meet next-generation demands for RF and mixed-signal circuits.