Deep Ultraviolet Photodetector - Materials and Devices
At a Glance
Section titled āAt a Glanceā| Metadata | Details |
|---|---|
| Publication Date | 2023-06-05 |
| Journal | Crystals |
| Authors | Wannian Fang, Qiang Li, Jiaxing Li, Yuxuan Li, Qifan Zhang |
| Institutions | Xiāan Jiaotong University, University of Sheffield |
| Citations | 40 |
| Analysis | Full AI Review Included |
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View Original Abstract
The application of deep ultraviolet detection (DUV) in military and civil fields has increasingly attracted the attention of researchersā attention. Compared with the disadvantages of organic materials, such as complex molecular structure and poor stability, inorganic materials are widely used in the field of DUV detection because of their good stability, controllable growth, and other characteristics. Rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional detectors. Herein, the development history and types of DUV detectors are briefly introduced. Typical UWBG detection materials and their preparation methods, as well as their research and application status in the field of DUV detection, are emphatically summarized and reviewed, including III-nitride semiconductors, gallium oxide, diamond, etc. Finally, problems pertaining to DUV detection materials, such as the growth of materials, the performance of devices, and their future development, are also discussed.
Tech Support
Section titled āTech SupportāOriginal Source
Section titled āOriginal SourceāReferences
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